2SC2899 silicon npn triple diffused ade-208-889 (z) 1st. edition sep. 2000 application high speed and high voltage switching outline 1. emitter 2. collector 3. base to-126 mod 1 2 3 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 500 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 10 v collector current i c 0.5 a collector peak current i c(peak) 1.0 a collector power dissipation p c 0.75 w p c * 1 10 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c note: 1. value at t c = 25 c.
2SC2899 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to emitter sustain voltage v ceo(sus) 400 v i c = 0.1 a, r be = , l = 100 mh v cex(sus) 400 v i c = 0.5 a, i b1 = ? b2 = 0.1 a, v be = ? v, l = 180 m h, clamped emitter to base breakdown voltage v (br)ebo 10 v i e = 10 ma, i c = 0 collector cutoff current i cbo 20 m av cb = 400 v, i c = 0 i ceo 50 m av ce = 350 v, r be = dc current transfer ratio h fe1 15 v ce = 5 v, i c = 0.25 a* 1 h fe2 7 v ce = 5 v, i c = 0.5 a* 1 collector to emitter saturation voltage v ce(sat) 1.0 v i c = 0.25 a, i b = 0.05 a* 1 base to emitter saturation voltage v be(sat) 1.5 v turn on time t on 1.0 m si c = 0.5 a, i b1 = ? b2 = 0.1 a, storage time t stg 2.0 m sv cc @ 150 v fall time t f 1.0 m s note: 1. pulse test 0 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 50 100 150 1 12 8 0.001 0.01 0.1 10 1.0 collector to emitter voltage v ce (v) collector current i c (a) 1 3 10 30 100 300 1,000 area of safe operation i c (max) (continuous) i c (peak) ta = 25 c, 1 shot 25 m s 50 m s 250 m s pw = 1 ms dc operation (t c = 25 c)
2SC2899 3 case temperature t c ( c) collector current derating rate (%) 0 collector current derating rate 20 40 60 80 100 50 100 150 is/b limit area 0.01 0.03 0.1 0.3 1.0 10 3 thermal resistance q j-c ( c/w) 0.01 0.1 1.0 10 (s) 0.01 0.1 1.0 10 (ms) transient thermal resistance time t 10 ms?0 s 10 m s?0 ms t c = 25 c 0 0.2 0.4 0.6 0.8 1.0 collector to emitter voltage v ce (v) collector current i c (a) 0 100 200 300 400 500 reverse bias area of safe operation 350 v, 1 a 450 v, 0.1 a 400 v, 0.5 a i b2 = ?.1 a 300 400 600 500 base to emitter resistance r be ( w ) collector to emitter voltage v cer (v) 100 1 k 10 k 100 k 1 m collector to emitter voltage vs. base to emitter resistance i c = 1 ma
2SC2899 4 collector to emitter voltage v ce (v) collector current i c (a) 0 typical output characteristics 12345 0.1 0.2 0.3 0.4 0.5 t c = 25 c i b = 0 10 20 30 40 50 5 ma base to emitter voltage v be (v) collector current i c (a) 0 typical transfer characteristics 0.4 0.8 1.2 1.6 2.0 0.2 0.4 0.6 0.8 1.0 t c = 25 c v ce = 5 v 1 3 30 100 10 collector current i c (a) dc current transfer ratio h fe 0.001 0.003 0.01 0.03 0.1 0.3 1.0 dc current transfer ratio vs. collector current v ce = 5 v t c = ?5 c 25 c 75 c 0.01 0.03 1.0 0.3 1.0 3 10 base current i b (a) collector to emitter saturation voltage v ce (sat) (v) 0.001 0.003 0.01 0.03 0.1 0.3 1.0 collector to emitter saturation voltage vs. base current 0.2 a 0.1 a t c = 25 c i c = 0.05 a
2SC2899 5 0.01 0.03 0.1 0.3 1.0 3 10 collector current i c (a) 0.001 0.003 0.01 0.03 0.1 0.3 1.0 collector to emitter saturation voltage v ce (sat) (v) base to emitter saturation voltage v be (sat) (v) saturation voltage vs. collector current v be (sat) v ce (sat) l c = 5 l b t c = 25 c 0.01 0.03 0.1 0.3 1.0 3 10 collector current i c (a) switching time t ( m s) 0.001 0.003 0.01 0.03 0.1 0.3 1.0 switching time vs. collector current t on t f t stg i c = 5 i b1 = ? i b2 v cc 150 v = . . 0.05 0.1 0.3 1.0 3 5 case temperature t c ( c) switching time t ( m s) 0 25 50 75 100 125 switching time vs. case temperature t on t f t stg i c = 0.5 a i b1 = ? b2 = 0.1 a r l = 300 w v cc 150 v = . .
2SC2899 6 package dimensions 3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj mass (reference value) to-126 mod 0.67 g unit: mm
2SC2899 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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